ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,851, issued on Nov. 3, was assigned to Intel Corp. (Santa Clara, Calif.).
"Laser assisted etching of dielectrics in IC devices" was invented by Adel Elsherbini (Chandler, Ariz.), Shawna Liff (Scottsdale, Ariz.), Kimin Jun (Portland, Ore.), Veronica Strong (Hillsboro, Ore.), Aleksandar Aleksov (Chandler, Ariz.), Jiraporn Seangatith (Chandler, Ariz.), Mohammad Enamul Kabir (Portland, Ore.), Johanna Swan (Scottsdale, Ariz.), Tushar Talukdar (Wilsonville, Ore.) and Omkar Karhade (Chandler, Ariz.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Composite integrated circuit (IC) device processing, including selective removal of inorganic dielectric material....