ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,643, issued on March 3, was assigned to Intel Corp. (Santa Clara, Calif.).
"Nanowire transistors and methods of fabrication" was invented by Biswajeet Guha (Hillsboro, Ore.), Brian Greene (Portland, Ore.), Robin Chao (Portland, Ore.), Adam Faust (Portland, Ore.), Chung-Hsun Lin (Portland, Ore.), Curtis Tsai (Beaverton, Ore.) and Kevin Fischer (Hillsboro, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor structure includes a first channel layer over a second channel layer, where the first and the second channel layers include monocrystalline silicon. An epitaxial source material is coupled to a first end of the first and second channel...