ALEXANDRIA, Va., March 24 -- United States Patent no. 12,588,257, issued on March 24, was assigned to Intel Corp. (Santa Clara, Calif.).
"2D layered gate oxide" was invented by Chelsey Dorow (Portland, Ore.), Sudarat Lee (Hillsboro, Ore.), Kevin P. O'Brien (Portland, Ore.), Ande Kitamura (Portland, Ore.), Ashish Verma Penumatcha (Beaverton, Ore.), Carl H. Naylor (Portland, Ore.), Kirby Maxey (Hillsboro, Ore.), Scott B. Clendenning (Portland, Ore.), Uygar E. Avci (Portland, Ore.) and Chia-Ching Lin (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments disclosed herein include transistor devices. In an embodiment, the transistor comprises a transition metal dichalcogenide (TMD) channel. In...