ALEXANDRIA, Va., March 17 -- United States Patent no. 12,581,857, issued on March 17, was assigned to Intel Corp. (Santa Clara, Calif.).

"Integrated thermoelectric device to mitigate integrated circuit hot spots" was invented by Noriyuki Sato (Hillsboro, Ore.), Hui Jae Yoo (Hillsboro, Ore.), Kevin L. Lin (Beaverton, Ore.), Van H. Le (Beaverton, Ore.) and Abhishek Anil Sharma (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are provided for forming one or more thermoelectric devices integrated within a substrate of an integrated circuit. Backside substrate processing may be used to form adjacent portions of the substrate that are doped with alternating dopant types (e.g., n-type dopan...