ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,791, issued on June 9, was assigned to Intel Corp. (Santa Clara, Calif.).

"Single patterning cylindrical transistor and capacitor dynamic random access memory" was invented by Abhishek Sharma (Portland, Ore.), Tahir Ghani (Portland, Ore.), Wilfred Gomes (Portland, Ore.) and Anand Murthy (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuit dies, systems, and techniques are described herein related to one transistor-one capacitor dynamic random access memory. A memory device includes vertically aligned transistors having annular semiconductor structures and a shared bit line extending through the annular semiconductor struc...