US Patent Issued to Intel on June 23 for "Vertical diodes in stacked transistor technologies" (Oregon Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,692, issued on June 23, was assigned to Intel Corp. (Santa Clara, Calif.).

"Vertical diodes in stacked transistor technologies" was invented by Benjamin Orr (Beaverton, Ore.), Nicholas A. Thomson (Hillsboro, Ore.), Ayan Kar (Portland, Ore.), Nathan D. Jack (Forest Grove, Ore.), Kalyan C. Kolluru (Portland, Ore.), Patrick Morrow (Portland, Ore.), Cheng-Ying Huang (Hillsboro, Ore.) and Charles C. Kuo (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Integrated circuits including vertical diodes. In an example, a first transistor is above a second transistor. The first transistor includes a first semiconductor body extending laterally fro...