US Patent Issued to Intel on June 23 for "Low resistance metal to semiconductor contacts for integrated NMOS and PMOS transistors" (Oregon Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,688, issued on June 23, was assigned to Intel Corp. (Santa Clara, Calif.).

"Low resistance metal to semiconductor contacts for integrated NMOS and PMOS transistors" was invented by Christopher J. Jezewski (Portland, Ore.) and Matthew V. Metz (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Complementary metal-oxide-semiconductor (CMOS) devices and methods related to selective metal contacts to n-type and p-type source and drain semiconductors are discussed. A p-type metal is deposited on n- and p-type source/drains. The p-type metal is selectively removed from the n-type source/drains but remains on dielectric materials adjacent the n-...