US Patent Issued to Intel on June 23 for "Implantation through an etch stop layer" (Oregon Inventors)

ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,935, issued on June 23, was assigned to Intel Corp. (Santa Clara, Calif.).

"Implantation through an etch stop layer" was invented by Moshe Dolejsi (Portland, Ore.), Harish Ganapathy (Portland, Ore.), Travis W. Lajoie (Forest Grove, Ore.), Deepyanti Taneja (Happy Valley, Ore.), Huiying Liu (Portland, Ore.), Cheng Tan (Hillsboro, Ore.), Timothy Jen (Portland, Ore.), Van H. Le (Beaverton, Ore.) and Abhishek A. Sharma (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a first layer comprising dielectric material. One or both of an interconnect feature and a device are within the dielectric material of the first...