US Patent Issued to Intel on July 21 for "Integrated circuit structures including elastrostatic discharge ballasting resistor based on buried power rail" (German Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,690,275, issued on July 21, was assigned to Intel Corp. (Santa Clara, Calif.).

"Integrated circuit structures including elastrostatic discharge ballasting resistor based on buried power rail" was invented by Harald Gossner (Riemerling, Germany), Georgios Panagopoulos (Munich), Johannes Xaver Rauh (Kirchseeon, Germany) and Richard Geiger (Munich).

According to the abstract* released by the U.S. Patent & Trademark Office: "IC structures including BPRs used for ESD ballasting are disclosed. An IC structure includes semiconductor structures of one or more transistors. A semiconductor structure may be a fin, nanowire, or nanoribbon of a semiconductor material. The IC structure also includ...