US Patent Issued to Intel on July 14 for "Gallium nitride (GaN) devices with through-silicon vias" (Oregon Inventors)

ALEXANDRIA, Va., July 14 -- United States Patent no. 12,685,121, issued on July 14, was assigned to Intel Corp. (Santa Clara, Calif.).

"Gallium nitride (GaN) devices with through-silicon vias" was invented by Han Wui Then (Portland, Ore.), Marko Radosavljevic (Portland, Ore.), Heli Chetanbhai Vora (Hillsboro, Ore.), Samuel James Bader (Hillsboro, Ore.), Ahmad Zubair (Hillsboro, Ore.), Thomas Hoff (Hillsboro, Ore.), Pratik Koirala (Portland, Ore.), Michael S. Beumer (Portland, Ore.), Paul Nordeen (Hillsboro, Ore.) and Nityan Nair (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Gallium nitride (GaN) devices with through-silicon vias for integrated circuit technology are described. In an example,...