ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,363, issued on Feb. 17, was assigned to Intel Corp. (Santa Clara, Calif.).
"Gate cut structures formed before dummy gate" was invented by Leonard P. Guler (Hillsboro, Ore.), Madeleine Beasley (Beaverton, Ore.), Allen B. Gardiner (Portland, Ore.), Aryan Navabi Shirazi (Portland, Ore.), Tahir Ghani (Portland, Ore.) and Sairam Subramanian (Portland, Ore.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are provided herein to form semiconductor devices having self-aligned gate cut structures. In an example, neighboring semiconductor devices each include a semiconductor region extending between a source region and a drain region, and a gate stru...