US Patent Issued to Intel on Feb. 10 for "Memory with one access transistor for multiple hysteretic capacitors" (Oregon Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,334, issued on Feb. 10, was assigned to Intel Corp. (Santa Clara, Calif.).

"Memory with one access transistor for multiple hysteretic capacitors" was invented by Abhishek A. Sharma (Hillsboro, Ore.) and Wilfred Gomes (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various arrangements for IC devices implementing memory with one access transistor for multiple hysteretic capacitors are disclosed. An example IC device includes a memory array of M memory units, where each memory unit includes an access transistor and N hysteretic capacitors coupled to the access transistor in a way that allows selecting all of the N hysteretic capacitors ...