US Patent Issued to Intel on Dec. 23 for "Vertically spaced intra-level interconnect line metallization for integrated circuit devices" (Oregon, California Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,506,059, issued on Dec. 23, was assigned to Intel Corp. (Santa Clara, Calif.).

"Vertically spaced intra-level interconnect line metallization for integrated circuit devices" was invented by Kevin L. Lin (Beaverton, Ore.), Sukru Yemenicioglu (Santa Clara, Calif.), Patrick Morrow (Portland, Ore.), Richard Schenker (Portland, Ore.) and Mauro Kobrinsky (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit interconnect level including a lower metallization line vertically spaced from upper metallization lines. Lower metallization lines may be self-aligned to upper metallization lines enabling increased metallization line width ...