US Patent Issued to Intel on Dec. 2 for "Embedded dynamic random-access memory (eDRAM) to operate based on data access characteristics" (Oregon, California Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,832, issued on Dec. 2, was assigned to Intel Corp. (Santa Clara, Calif.).

"Embedded dynamic random-access memory (eDRAM) to operate based on data access characteristics" was invented by Abhishek Anil Sharma (Portland, Ore.), Pushkar Ranade (San Jose, Calif.), Wilfred Gomes (Portland, Ore.) and Rajabali Koduri (Saratoga, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and apparatus to implement an integrated circuit to operate based on data access characteristics. For example, the integrated circuit comprises a first array comprising a first plurality of memory cells, a second array comprising a second plurality of memory cells, and both...