ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,787, issued on Aug. 25, was assigned to Intel Corp. (Santa Clara, Calif.).

"Transistor comprising a uniform stack of channel material layers" was invented by William Hsu (Portland, Ore.), Daniel Schulman (Hillsboro, Ore.), Sabih Omar (Hillsboro, Ore.), Vivek Thirtha (Portland, Ore.), Michael Babb (Portland, Ore.), Chen-Yi Su (Portland, Ore.), Brian Greene (Portland, Ore.), Chung-Hsun Lin (Portland, Ore.), Oleg Golonzka (Beaverton, Ore.) and Kevin Fischer (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Transistor structures comprising a stack of channel material layers may be fabricated from a material stack comprising an uppermost sa...