US Patent Issued to Intel on Aug. 25 for "Gate cuts with self-forming polymer layer" (Oregon Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,835, issued on Aug. 25, was assigned to Intel Corp. (Santa Clara, Calif.).

"Gate cuts with self-forming polymer layer" was invented by Reza Bayati (Portland, Ore.), Matthew J. Prince (Portland, Ore.), Alison V. Davis (Portland, Ore.), Chun C. Kuo (Hillsboro, Ore.), Andrew Arnold (Hillsboro, Ore.), Ramy Ghostine (Portland, Ore.) and Li Huey Tan (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are provided to form semiconductor devices that include one or more gate cuts having a layer of polymer material at edges of the gate cut. The polymer layer may be provided as a byproduct of the etching process used to form the gate cut...