US Patent Issued to Intel on Aug. 25 for "Ferroelectric capacitor within backside interconnect" (Oregon Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,760, issued on Aug. 25, was assigned to Intel Corp. (Santa Clara, Calif.).

"Ferroelectric capacitor within backside interconnect" was invented by Sourav Dutta (Hillsboro, Ore.), Nazila Haratipour (Portland, Ore.), Uygar E. Avci (Portland, Ore.), Vachan Kumar (Hillsboro, Ore.), Christopher M. Neumann (Portland, Ore.), Shriram Shivaraman (Hillsboro, Ore.), Sou-Chi Chang (Portland, Ore.) and Brian S. Doyle (Portland, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Backside integrated circuit capacitor structures. In an example, a capacitor structure includes a layer of ferroelectric material between first and second electrodes. The first electrode ...