US Patent Issued to Intel NDTM US on Nov. 3 for "Nand duty cycle correction for data input write path" (California Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,842, issued on Nov. 3, was assigned to Intel NDTM US LLC (Santa Clara, Calif.).

"Nand duty cycle correction for data input write path" was invented by Sriram Balasubrahmanyam (Folsom, Calif.), Tri Tran (Elk Grove, Calif.), Jong Tai Park (Pleasanton, Calif.), Priyanka Ravindran (San Jose, Calif.) and Chuc Thanh (Davis, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An example of an apparatus may include NAND memory and circuitry coupled to the NAND memory to provide duty cycle correction (DCC) for one or more write paths of the NAND memory. Other examples are disclosed and claimed."

The patent was filed on Dec. 19, 2022, under Application No. ...