US Patent Issued to INTEL NDTM US on March 17 for "Additional silicide layer on top of staircase for 3D NAND WL contact connection" (Chinese Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,580,018, issued on March 17, was assigned to INTEL NDTM US LLC (Santa Clara, Calif.).

"Additional silicide layer on top of staircase for 3D NAND WL contact connection" was invented by Liu Liu (Liaoning, China), Junchao Ding (Liaoning, China), Yingming Liu (Liaoning, China), Jong Sun Sel (Liaoning, China), Yixin Ma (Liaoning, China), Jinwoo Lee (Liaoning, China) and Xi Lin (Liaoning, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment of an apparatus may include a substrate, a memory array of vertical 3D NAND strings formed in the substrate, a staircase region formed in the substrate, a polysilicon wordline extended horizontally into the ...