US Patent Issued to Intel NDTM US on Feb. 3 for "Apparatus and method to improve read window budget in a three dimensional NAND memory" (California, Massachusetts Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,542,187, issued on Feb. 3, was assigned to Intel NDTM US LLC (Santa Clara, Calif.).

"Apparatus and method to improve read window budget in a three dimensional NAND memory" was invented by Rifat Ferdous (Santa Clara, Calif.), Sung-Taeg Kang (Palo Alto, Calif.), Golnaz Karbasian (San Jose, Calif.), Ali Khakifirooz (Brookline, Mass.) and Rohit S. Shenoy (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The gap width in a threshold voltage (Vt) distribution for a 3D NAND Flash cell is improved by performing touchup program on a selected portion of the word lines in a block after all of the word lines in the block have been programmed."

The pat...