US Patent Issued to INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES on July 7 for "Computing-in-memory circuit, chip and electronic device" (Chinese Inventors)

ALEXANDRIA, Va., July 7 -- United States Patent no. 12,675,432, issued on July 7, was assigned to INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES (Beijing).

"Computing-in-memory circuit, chip and electronic device" was invented by Feng Zhang (Beijing) and Hao Wu (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application discloses a computing-in-memory circuit, chip and electronic device, wherein the computing-in-memory circuit comprises: a resistive random access memory array, a clamping circuit, a current mirror and an analog-to-digital conversion circuit; the clamping circuit is connected between a signal input terminal and the resistive random access memory array, con...