US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on Oct. 14 for "Memory cell structure, memory array structure, and voltage biasing method" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,463, issued on Oct. 14, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Memory cell structure, memory array structure, and voltage biasing method" was invented by Hangbing Lv (Beijing), Jianguo Yang (Beijing), Xiaoxin Xu (Beijing) and Ming Liu (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a memory cell structure, a memory array structure, and a voltage biasing method. The memory cell structure includes: a substrate layer, a well layer and a transistor. The substrate layer is configured to support the memory cell structure; the well layer is embedded in the substrate layer, an upper surfac...