US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on March 31 for "Memory device, method of manufacturing memory device, and electronic device including memory device" (New York Inventor)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,451, issued on March 31, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Memory device, method of manufacturing memory device, and electronic device including memory device" was invented by Huilong Zhu (Poughkeepsie, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a memory device, a method of manufacturing the memory device, and an electronic device. The memory device may include: a plurality of first device layers, each including first and second source/drain regions and a channel region; a plurality of second device layers stacked on the first device layers, each including third and fourth ...