US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on Jan. 27 for "Gate-all-around/multi-gate semiconductor device with body contact, method of manufacturing gate-all-around/multi-gate semiconductor device with body contact, and electronic apparatus" (Chinese Inventor)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,515, issued on Jan. 27, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Gate-all-around/multi-gate semiconductor device with body contact, method of manufacturing gate-all-around/multi-gate semiconductor device with body contact, and electronic apparatus" was invented by Huilong Zhu (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a vertical semiconductor device with a body contact, a manufacturing method, and an electronic apparatus. The semiconductor device includes: an active region vertically disposed on a substrate relative to the substrate, including lower and upper source/drain region...