US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on Aug. 4 for "Metal interconnection structure of semiconductor device and method for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,988, issued on Aug. 4, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Metal interconnection structure of semiconductor device and method for forming the same" was invented by Jianfeng Gao (Beijing), Weibing Liu (Beijing), Junjie Li (Beijing), Na Zhou (Beijing), Tao Yang (Beijing), Junfeng Li (Beijing) and Jun Luo (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A metal interconnection structure of a semiconductor device and a method for forming the same. The method includes: providing a substrate; forming a first dielectric layer on the substrate; forming a first conductive structure in the first dielect...