US Patent Issued to Institute of Microelectronics, Chinese Academy of Sciences on Aug. 25 for "Spintronics memory cell and method of manufacturing the same, memory, and method of storing information" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,045, issued on Aug. 25, was assigned to Institute of Microelectronics, Chinese Academy of Sciences (Beijing).

"Spintronics memory cell and method of manufacturing the same, memory, and method of storing information" was invented by Guozhong Xing (Beijing), Hao Zhang (Beijing), Xuefeng Zhao (Beijing), Ziwei Wang (Beijing), Changqing Xie (Beijing) and Ming Liu (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "The memory cell includes: a piezoelectric substrate layer, wherein two ends of the piezoelectric substrate layer are respectively provided with a first electrode and a second electrode, and a current-free drive of skyrmion is implemented by...