US Patent Issued to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES on Aug. 25 for "Method for preparing reservoir element" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,721,050, issued on Aug. 25, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing).

"Method for preparing reservoir element" was invented by Xiaoxin Xu (Beijing), Wenxuan Sun (Beijing), Jie Yu (Beijing), Jinru Lai (Beijing), Xu Zheng (Beijing) and Danian Dong (Beijing).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a reservoir computing apparatus, related to artificial intelligence. The method comprises: step a), providing a bottom electrode layer, a dielectric layer, a resistive switching layer, and a top electrode layer based on the above-listed sequence on a substrate to obtain a to-be-annealed ...