US Patent Issued to INNOSCIENCE (SUZHOU) TECHNOLOGY on Feb. 24 for "Nitride-based semiconductor circuit and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,765, issued on Feb. 24, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou City, China).

"Nitride-based semiconductor circuit and method for manufacturing the same" was invented by Qiyue Zhao (Suzhou City, China) and Wuhao Gao (Suzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride-based semiconductor circuit including a first semiconductor substrate, a second semiconductor substrate, a nitride-based heterostructure, connectors, a first patterned conductive layer, a second patterned conductive layer, and connecting vias is provided. The second substrate is disposed on the first substrate. The first substrate has fi...