US Patent Issued to INNOSCIENCE (SUZHOU) TECHNOLOGY on Dec. 2 for "Nitride-based semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,490, issued on Dec. 2, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou, China).

"Nitride-based semiconductor device and method for manufacturing the same" was invented by Weixing Du (Suzhou, China) and Jheng-Sheng You (Suzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode and a drain electrode, a gate structure, a first passivation layer, a second passivation layer and a field plate. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer. The ...