US Patent Issued to INNOSCIENCE (SUZHOU) TECHNOLOGY on Aug. 25 for "Nitride-based semiconductor device and method for manufacturing the same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,792, issued on Aug. 25, was assigned to INNOSCIENCE (SUZHOU) TECHNOLOGY Co. LTD. (Suzhou City, China).

"Nitride-based semiconductor device and method for manufacturing the same" was invented by Chao Yang (Suzhou City, China), Chunhua Zhou (Suzhou City, China), Qiyue Zhao (Suzhou City, China) and Jingyu Shen (Suzhou City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a nitride-based multiple semiconductor layer, a gate electrode, a gate insulator layer, and a source electrode. The first nitride-based semiconductor layer includes a drift region and at least...