US Patent Issued to INNOSCIENCE (SUZHOU) SEMICONDUCTOR on Oct. 27 for "Semiconductor device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 27 -- United States Patent no. 12,777,685, issued on Oct. 27, was assigned to INNOSCIENCE (SUZHOU) SEMICONDUCTOR Co. LTD. (Jiangsu, China).

"Semiconductor device and manufacturing method thereof" was invented by Jianfa Zhang (Guangdong, China) and Sichao Li (Guangdong, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first doped nitride semiconductor layer, and a second doped nitride semiconductor layer. The first nitride semiconductor layer is formed on the substrate. Th...