US Patent Issued to INJE UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION on May 26 for "Method for crystallization of metal oxide thin film by using thermal dissipation annealing" (South Korean Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,637,772, issued on May 26, was assigned to INJE UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION (Gimhae-si, South Korea).

"Method for crystallization of metal oxide thin film by using thermal dissipation annealing" was invented by Jewon Lee (Busan, South Korea), Jae-Young Leem (Busan, South Korea) and Dongwan Kim (Busan, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a method for crystallization of a metal oxide thin film by using thermal dissipation annealing (TDA) and exhibits an effect enabling high-temperature thermal annealing, which is essential for the performance improvement of a semiconductor mate...