ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,738, issued on Dec. 16, was assigned to Infinera Corp..
"Waveguide dual-depletion region (DDR) photodiodes" was invented by Mingzhi Lu (Fremont, Calif.) and Peter W. Evans (Tracy, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Consistent with the present disclosure, a DDR photodiode is provided on a substrate adjacent to a passive waveguide. In order to efficiently capture light output from the waveguide, the photodiode is coupled to the waveguide with a butt-joint. As a result, the photodiode and the waveguide abut one another such that the dominant mode of light propagating in the waveguide parallel to the substrate is supplied directly to ...