ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,749,515, issued on Sept. 29, was assigned to Infineon Technologies AG (Neubiberg, Germany).
"Memory readout circuit" was invented by Mihail Jefremow (Augsburg, Germany), Thomas Kern (Aschheim, Germany) and Arndt Voigtlander (Antdorf, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "One embodiment describes a memory readout circuit. The memory readout circuit includes a readout node having a capacitance that is discharged by the memory cell to read out a memory cell by means of a cell current, a level detector that is configured to provide a digital output signal and to switch over the output signal when the potential of the readout node (due to t...