US Patent Issued to Infineon Technologies on Nov. 11 for "Silicon carbide device with trench gate structure" (Austrian Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,302, issued on Nov. 11, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Silicon carbide device with trench gate structure" was invented by Ralf Siemieniec (Villach, Austria), Wolfgang Jantscher (Villach, Austria) and David Kammerlander (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide device includes a silicon carbide body with a trench gate structure that extends from a first surface into the silicon carbide body. A body region is in contact with an active sidewall of the trench gate structure. A source region is in contact with the active sidewall and located between the body region and the first su...