US Patent Issued to Infineon Technologies on Nov. 11 for "Magnetoresistive magnetic field sensor having a freely selectable magnetic operating point" (Austrian, German Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,467,991, issued on Nov. 11, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Magnetoresistive magnetic field sensor having a freely selectable magnetic operating point" was invented by Armin Satz (Villach, Austria) and Juergen Zimmer (Neubiberg, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein is a magnetoresistive magnetic field sensor which, inter alia, includes four magnetoresistive elements arranged in a Wheatstone full bridge circuit. A first magnetoresistive element and a second magnetoresistive element, which respectively have an inverse behavior in relation to a change in conductance, are arranged in a first...