US Patent Issued to Infineon Technologies on May 13 for "Power semiconductor device and method of producing a power semiconductor device" (German Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,594, issued on May 13, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Power semiconductor device and method of producing a power semiconductor device" was invented by Alim Karmous (Dresden, Germany) and Thorsten Arnold (Jesenwang, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device includes an active region with power cells, each configured to conduct a load current portion between first and second load terminals. Each power cell includes: trenches and mesas laterally confined by the trenches and in a vertical direction adjoining a drift region. The mesas include an active mesa having a source region ...