US Patent Issued to Infineon Technologies on March 17 for "Power semiconductor circuit and method for determining a temperature of a power semiconductor component" (German Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,578,235, issued on March 17, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Power semiconductor circuit and method for determining a temperature of a power semiconductor component" was invented by Andre Arens (Ruethen, Germany) and Waldemar Jakobi (Soest, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor circuit includes: a power semiconductor element having a gate electrode configured to actuate the power semiconductor element, a collector electrode, and an emitter electrode electrically connected to a first emitter terminal; and a temperature sensor having a first measurement point with a measurement termin...