US Patent Issued to Infineon Technologies on March 17 for "Circuits and systems for monitoring degradation of one or more interface channels of a semiconductor device using a degradation monitoring circuit that includes an electrical sensor" (Romanian Inventors)

ALEXANDRIA, Va., March 17 -- United States Patent no. 12,578,378, issued on March 17, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Circuits and systems for monitoring degradation of one or more interface channels of a semiconductor device using a degradation monitoring circuit that includes an electrical sensor" was invented by Cristian Mihai Boianceanu (Bucharest, Romania) and Ciprian-Ionut Florea (Rosu, Romania).

According to the abstract* released by the U.S. Patent & Trademark Office: "A system includes a semiconductor device that includes a source terminal, a drain terminal, and an interface layer between the source terminal and the drain terminal, the interface layer including a plurality of interface channels. Th...