US Patent Issued to Infineon Technologies on July 21 for "Controlled switching of stress voltages in lateral DMOS structures" (German, Austrian Inventors)

ALEXANDRIA, Va., July 21 -- United States Patent no. 12,687,575, issued on July 21, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Controlled switching of stress voltages in lateral DMOS structures" was invented by Till Schloesser (Munich), Axel Reithofer (Graz, Austria) and Jens Barrenscheen (Munich).

According to the abstract* released by the U.S. Patent & Trademark Office: "One exemplary embodiment relates to a circuit which is integrated into a semiconductor substrate and which comprises a lateral field effect transistor having a drift region and a field plate electrode, which is isolated from the drift region by an isolation zone. The integrated circuit further comprises a first terminal, which is coupled to the fiel...