US Patent Issued to Infineon Technologies on Jan. 20 for "Input capacitance enhancement for ESD ruggedness in semiconductor devices" (German Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,490, issued on Jan. 20, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Input capacitance enhancement for ESD ruggedness in semiconductor devices" was invented by Rabie Djemour (Munich), Hannes Mathias Geike (Munich) and Anton Mauder (Kolbermoor, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor die includes: a semiconductor substrate; transistor cells formed in a first region of the semiconductor substrate and electrically coupled in parallel to form a power transistor, the transistor cells including first trenches that extend from a first surface of the semiconductor substrate into the first region; a gate pad ...