US Patent Issued to Infineon Technologies on Feb. 24 for "Power semiconductor module arrangement and method for producing the same" (German Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,564,094, issued on Feb. 24, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Power semiconductor module arrangement and method for producing the same" was invented by Marianna Nomann (Ruethen, Germany) and Elena Zwar (Dortmund, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor module arrangement comprises a substrate comprising a dielectric insulation layer, and a first metallization layer attached to the dielectric insulation layer, at least one semiconductor body mounted on the first metallization layer, and a first layer comprising an encapsulant, the first layer being arranged on the substrate and covering t...