US Patent Issued to Infineon Technologies on Feb. 24 for "Heteroepitaxial semiconductor device and method for fabricating a heteroepitaxial semiconductor device" (German Inventors)

ALEXANDRIA, Va., Feb. 24 -- United States Patent no. 12,563,854, issued on Feb. 24, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Heteroepitaxial semiconductor device and method for fabricating a heteroepitaxial semiconductor device" was invented by Stefano Parascandola (Dresden, Germany), Dirk Offenberg (Dresden, Germany) and Boris Binder (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A heteroepitaxial semiconductor device includes a bulk semiconductor substrate, a seed layer including a first semiconductor material, the seed layer being arranged at a first side of the bulk semiconductor substrate and including a first side facing the bulk semiconductor substrate, an oppo...