US Patent Issued to Infineon Technologies on Feb. 10 for "Method of forming a semiconductor device including an absorption layer" (Austrian, German Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,645, issued on Feb. 10, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Method of forming a semiconductor device including an absorption layer" was invented by Hans-Joachim Schulze (Taufkirchen, Germany), Mihai Draghici (Villach, Austria), Matteo Piccin (Villach, Austria) and Marko David Swoboda (Dresden, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device is described. The method includes providing a parent substrate including a substrate portion of a first conductivity type. The method further includes forming an absorption layer in the parent substrate by an ion implantation proc...