US Patent Issued to Infineon Technologies on Feb. 10 for "Dynamic control of data transient rise time based on process, temperature, voltage (PVT) data in a memory device" (Israeli Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,548,607, issued on Feb. 10, was assigned to Infineon Technologies LLC (San Jose, Calif.).

"Dynamic control of data transient rise time based on process, temperature, voltage (PVT) data in a memory device" was invented by Ron Varkony (Netanya, Israel) and Yoram Betser (Mazkeret-Batya, Israel).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an array of memory cells of non-volatile memory and an input/output (IO) buffer coupled to the array. The IO buffer comprises a primary pullup transistor coupled between a power supply and ground and coupled to a data quick (DQ) output line. The IO buffer includes selectable pullup transistors co...