US Patent Issued to Infineon Technologies on Dec. 2 for "Power semiconductor device with voltage clamp circuit" (Austrian Inventor)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,489,437, issued on Dec. 2, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Power semiconductor device with voltage clamp circuit" was invented by Kennith Kin Leong (Villach, Austria).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power semiconductor device includes: a main power switch having a drain, source, and gate; and a voltage clamp circuit in parallel with the main power switch and having a clamp voltage less than a breakdown voltage of the main power switch. The voltage clamp circuit includes: a pulldown switch having a normally-on gate electrically connected to the source of the main power switch; a plurality of series-connected...