US Patent Issued to Infineon Technologies on Aug. 4 for "Method of thinning a semiconductor substrate to high evenness and semiconductor substrate having a device layer of high evenness" (German, Austrian Inventors)

ALEXANDRIA, Va., Aug. 5 -- United States Patent no. 12,701,797, issued on Aug. 4, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Method of thinning a semiconductor substrate to high evenness and semiconductor substrate having a device layer of high evenness" was invented by Alexander Frey (Lappersdorf, Germany), Bernhard Goller (Villach, Austria), Iris Moder (Villach, Austria), Ingo Muri (Villach, Austria), Alfred Sigl (Sinzing, Germany) and Tobias Weindler (Teublitz, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device is described. The method includes providing a semiconductor substrate. The semiconductor substrate includes a high-doped se...