US Patent Issued to Infineon Technologies on Aug. 11 for "Substrate" (German Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,708,003, issued on Aug. 11, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Substrate" was invented by Alexander Hohn (Soest, Germany) and Charles Rimbert-Riviere (Soest, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate includes a dielectric insulation layer, a first metallization layer arranged on a first surface of the dielectric insulation layer, and a second metallization layer arranged on a second, opposite surface of the dielectric insulation layer. The dielectric insulation layer includes an outer edge extending between the first and second surfaces. The outer edge includes first sections and second sections. Alo...