ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,275, issued on April 15, was assigned to Infineon Technologies AG (Neubiberg, Germany).
"Selective laser annealing method" was invented by Albert Birner (Regensburg, Germany), Rudolf Berger (Regensburg, Germany), Helmut Brech (Lappersdorf, Germany), Olaf Storbeck (Dresden, Germany), Haifeng Sun (Regensburg, Germany) and John Twynam (Regensburg, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes providing a semiconductor body, forming a thermosensitive element on or within the semiconductor body, forming a structured laser-reflective mask on the upper surface of the semiconductor body that covers the thermosensitive element and i...