US Patent Issued to Infineon Technologies Canada on Aug. 25 for "Selective gate overdrive of transistor" (Canadian Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,840, issued on Aug. 25, was assigned to Infineon Technologies Canada Inc. (Ottawa).

"Selective gate overdrive of transistor" was invented by Seyedarmin Miremad (Kingston, Canada), Iman Abdali Mashhadi (Kanata, Canada), Atrin Tavakoli (Ottawa) and Hossein Mousavian (Kanata, Canada).

According to the abstract* released by the U.S. Patent & Trademark Office: "Overdriving a power field-effect transistor. In response to a detection that the power field-effect transistor has entered the saturation region, the gate node of the power field-effect transistor is overdriven with a higher voltage. The detection of whether the power field-effect transistor is within the saturation region is d...